毛思宁，研究员，博士生导师，宁波希磁电子科技有限公司执行董事兼总经理。

    E-mail: maosining@nimte.ac.cn

主要简历：

    1984年毕业于北京大学物理系 获学士学位；

    1987年硕士毕业于北京大学技术物理系；

    1995年博士毕业于美国马里兰大学物理系超导中心，师从T.Venkatesan 教授(17年贝尔试验室工作经验，美国物理学会George E. Pake Prize获得者),从事薄膜材料的器件研发；

    1995年8月至2006年9月，加入希捷(SEAGATE)公司，历任GMR研发高级工程师、资深经理、总监、高级总监，带领他的团队研发了希捷公司第一代到最后一代巨磁阻磁头(GMR)产品，包括简单自旋阀结构、SAF结构以及自旋反射层等等，直接经济价值达20亿美元；

    2006年10月至2012年，出任西部数据硬盘磁头器件研发副总(VP in DEVICE TECHNOLOGY)，管理全球磁头设计和生产，开发西部数据共五代磁头产品(2007-2012)，直接经济价值达30亿美元，提高西部数据磁头技术水平从落后10个月到与日本TDK和希捷同时推出新产品；

    2012年回国，出任希磁电子科技有限公司(Sinomags Technology Co., LTD)总经理(CEO)，并担任中科院宁波材料所客聘研究员。

荣誉和奖项：

    西部数据(WD)创新奖(2007-2011年)

    超过70的希捷科技成就奖(1995-2006年)

    希捷公司优秀的技术创新和成就奖(1999 -2006)

    希捷公司"名人堂"奖2000/2003/2006年

    美国马里兰大学研究生科研创新奖(1995年)

    美国材料研究学会(MRS)研究生奖(波士顿,1993年)

学术任职：

    IEEE的高级会员(Sr. Member)、应用物理学(JAP)，应用物理快报(APL)，以及磁学IEEE Tran.Magn.的评审 IEEE技术委员会的成员，还担任Intermag, MMM, 和 TMRC组委会成员、中国物理研究所客座教授(2005-2008)、新加坡的数据研究所(DSI)特聘研究员(2005)和美国华美信息存储协会(CAISS) 资深顾问

研究方向：

    GMR和TMR磁电子材料、物理和器件，物联网传感器技术研发，以及自旋电子学领域。

代表性论文：

1．Feng Liu, Yunfei Ding, Ravindra Kemshetti, Kenneth Davies, Paul Rana, and Sining Mao. Electrical low frequency random telegraph noise in magnetic tunnel junctions. Journal of Applied Physics 105, 07C927 (2009)

2．Sining Mao. Tunneling Magnetoresistive Heads for Magnetic Data Storage. J. Nanosci. Nanotechnol. 7, 1–12

3．*Sining Mao, Yonghua Chen Feng Liu Xingfu Chen Bin Xu Puling Lu Patwari, M. Haiwen Xi Clif Chang Miller, B. Menard, D. Pant, B. Loven, J. Duxstad, K. Shaoping Li Zhengyong Zhang Johnston, A. Lamberton, R. Gubbins, M. McLaughlin, T. Gadbois, J. Juren Ding Cross, B. Song Xue Ryan, P. Commercial TMR heads for hard disk drives: characterization and extendibility at 300 Gbit/in2. IEEE Transactions on Magnetics, 42 (1), 97

4．Sining Mao, Linville, E. Nowak, J. Zhenyong Zhang Shawn Chen Karr, B. Anderson, P. Ostrowski, M. Boonstra, T. Haeseok Cho Heinonen, O. Kief, M. Song Xue Price, J. Shukh, A. Amin, N. Kolbo, P. Pu-Ling Lu Steiner, P. Yong Chang Feng Nan-Hsiung Yeh Swanson, B. Ryan, P. Tunneling magnetoresistive heads beyond 150 Gb/in2. IEEE Transactions on Magnetics, 40(1), 307

5．Sining Mao, Lei Wang, Chunhong Hou, and Ed Murdock. Vertical GMR heads for 100G. IEEE Trans. on Magnetics, 39, 2396 (2003)

6．Sining Mao, Zheng Gao, Haiwen Xi, Kolbo, P, Plumer, M., Lei Wang, Goyal, A., Insik Jin, Jian Chen, Chunhong Hou White, R.M. Murdock, E. Spin-valve heads with self-stabilized free layer by antiferromagnet.IEEE Trans. on Magnetics, 38, 26 (2002)

7．Sining Mao; Nowak, J.; Dian Song; Kolbo, P.; Lei Wang; Linville, E.; Saunders, D.; Murdock, E.; Ryan, P. Spin tunneling heads above 20 Gb/in2. IEEE Trans. on Magnetics, 38, 78 (2002)

8．Sining Mao and Zheng Gao. Improvement of GMR properties of CrMnPt spin valves by DC magnetron sputtering. J. Appl. Phys. 9, 6662(2000)

9．Sining Mao, Anthony Mack, Eric Singleton, Jian Chen, Song Xue, Hong Wang, Zheng Gao, Jin Li, and Ed Murdock. Thermally stable spin valve films with synthetic antiferromagnet pinned by NiMn for recording heads beyond 20 Gbit/in2.J. Appl. Phys. 9, 5720(2000).

10．Sinign Mao, Jian Chen, and Ed Murdock. NSpin Valves with anti-parallel-pinned flux compensation layer. J. Appl. Phys. 86, 6606(2000)

11．Sining Mao, Jim Giusti, Nurul Amin, Jan Van ek, and Ed Murdock, Giant magnetoresistance properties of patterned IrMn exchange biased spin valves. J. Appl. Phys. 85, 6112 (1999)

12．Sining Mao, Martin Plumer, Anthony Mack, Zjijun Ynag, and Ed Murdock. Angular dependence of giant magnetoresistance properties of exchange biased spin valves. J. Appl. Phys. 85, 5033 (1999)

13．Sining Mao, Nurul Amin, and Ed Murdock, Temperature dependence of giant magnetoresistance properties of NiMn pinned spin valves, J. Appl. Phys. . 83, 6807 (1998)

14．Sining Mao, Sunita Gangopadhay, Nurul Amin, and Ed Murdock, NiMn Spin Valves with very high pinning field by Ion Beam Deposition, Appl. Phys. Lett, 69, 3593 (1996)

15．I. Takeuchi, S. N. Mao, X. X. Xi, K. Petersen, C. J. Lobb and T. Venkatesan,Observation of Josephson Effect in YBa2Cu3O7-x/Nd1.85Ce0.15 CuO4-y Bilayer Junctions, Appl. Phys. Lett. 67, 2872 (1995)

1．Sining Mao, N. Amin, S.Gangopadhyay.Murdock,Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors, USP 5764056

2．Sining Mao, Z.Gao, E. Singleton, Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer, USP 6490140

3．Sining Mao.Current perpendicular to plane spin valve head, USP 6466619

4．Sining Mao，S. Xue, W. Vavra, W. O'kane, J. Price, P. Ryan, Pat.Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments, USP 6771472

5．Sining Mao.Tunneling magnetoresistive head in current perpendicular to plane mode, USP 6700760

6．Sining Mao. Structures and materials to stabilize active layers in VGMR head using AFM transverse bias, USP 6738235

7．Sining Mao, J.Nowak, E. Linville, H.Chen, S. Xue.TMR head structure with conductive shunt, USP 7151654

8．Sining Mao, E. Linville, Z. Gao, B. Karr, J. Nowak, O. Heinonen.Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments, USP 7035062