1．Bin Chen, Zhenghu Zuo, Yiwei Liu, Qing-Feng Zhan, Yali Xie, Huali Yang, Guohong Dai, Zhixiang Li, Gaojie Xu, and Run-Wei Li. Tunable photovoltaic effects in transparent Pb(Zr0.53,Ti0.47)O3 capacitors. Appl. Phys. Lett. 100 193703 (2012);

2．Zhenghu Zuo, Bin Chen, Qingfeng Zhan, Yiwei Liu, Huali Yang, Zhixiang Li, Gaojie Xu and Run-Wei Li. Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes. J. Phys. D: Appl. Phys. 45 185302 (2012);

3．Guohong Dai, Qingfeng Zhan, Yiwei Liu, Huali Yang, Xiaoshan Zhang, Bin Chen and Run-Wei Li. Mechanically tunable magnetic properties of Fe81Ga19 films grown on flexible substrates. Appl. Phys. Lett. 100, 122407 (2012);

4．Zou Cheng, Chen Bin, Zhu Xiao-Jian, Zuo Zheng-Hu, Liu Yi-Wei, Chen Yuan-Fu, Zhan Qing-Feng, and Li Run-Wei. Local leakage current behaviours of BiFeO3 films.Chin. Phys. B. 20.117701(2011).;

5．Bin Chen, Mi Li, Yiwei Liu, Zhenghu Zuo, Fei Zhuge, Qing-Feng Zhan and Run-Wei Li. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechology. 22,195201.(2011).

6．Mi Li, Fei Zhuge, Xiaojian Zhu, Kuibo Yin, Jinzhi Wang, Yiwei Liu, Congli He, Bin Chen and Run-Wei Li*, Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches. Nanotechnology, 21,425202(2010).

7．Kuibo Yin, Mi Li, Yiwei Liu, Congli He, Fei Zhuge, Bin Chen, Wei Lu,Xiaoqing Pan, and Run-Wei Li*,Resistance switching in polycrystalline BiFeO3 thin films. Appl. Phys. Lett.97,042101(2010).

8．D. J. Kim, J. Y. Jo, T. H. Kim, S. M. Yang, B. Chen, Y. S. Kim, and T. W. Noh, Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors, Appl. Phys. Lett., 91 132903 (2007).

9．B. Chen, H. Yang, J. Miao, B. Xu, X. G. Qiu, and B. R. Zhao, Leakage current of Pt/((Ba0.7Sr0.3)TiO3 interface with dead layer, J. Appl. Phys. 97 24106 (2005).

10．B. Chen, H. Yang, J Miao, L Zhao, B Xu, X. L. Dong, L. X. Cao, X. G. Qiu, B. R. Zhao, Structural and electrical characteristics of Pb(Zr0.53,Ti0.47)O3 thin films deposited on Si (100) substrate, Chin. Phys. Lett. 22 697 (2005).

11．X. L. Li, B. Chen, H. Y. Jing, H. B. Lu, B. R. Zhao, Z. H. Mai, Q. J. Jia, Experimental evidence of the "dead layer" at Pt/BaTiO3 interface, Appl. Phys. Lett., 87 222905 (2005).

12．B. Chen, H. Yang, L. Zhao, J. Miao, X. Y. Qi, B. Xu, X. G. Qiu, X. F. Duan and B. R. Zhao, Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-X capacitor, Appl. Phys. Lett., 84 583 (2004).

13．H. Yang, B. Chen, J. Miao, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Positive temperature of resistivity in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitors, Appl. Phys. Lett., 85 5019 (2004).

14．H. Yang, J. Miao, B. Chen, L. Zhao, B. Xu, X. L. Dong, L. X. Cao, X. G. Qiu, and B. R. Zhao, Abnormal temperature dependence of dielectric constant in (Ba0.7Sr0.3)TiO3 thin films, Appl. Phys. Lett., 85 4106 (2004).

15．J. Miao, W. R. Chen, L. Zhao, B. Chen, H. Yang, W. Peng, X. H. Zhu, B. Xu, L. X. Cao, X. G. Qiu, and B. R. Zhao, Enhanced dielectric properties of (Ba1-xSrx)TiO3 thin film grown on (La1-xSrx)MnO3 bottom layer, J. Appl. Phys. 96 6578 (2004).

16．H. Yang, B. Chen, K. Tao, X. G. Qiu, B. Xu and B. R. Zhao, Temperature- and field-dependent leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface, Appl. Phys. Lett., 83 1611 (2003).

17．H. Yang, K. Tao, B. Chen, X. G. Qiu, B. Xu and B. R. Zhao, Leakage mechanism of (Ba0.7Sr0.3)TiO3 thin films in the low-temperature range, Appl. Phys. Lett., 81 4817 (2002).